In a memory, most power is dissipated in high-capacitive lines such as predecoder lines, wordlines, and bitlines. To reduce the power dissipation in these high-capacitive lines, this paper proposes three techniques using charge recycling and charge sharing. The first is the charge recycling predecoder (CRPD) , the second is the charge recycling wordline decoder (CRWD), and the last one is the charge sharing bitline (CSBL) for a ROM. The CRPD and the CRVM recycle the previously used charge in predecoder lines and wordlines. Theoretically, the power consumption in predecoder lines and wordlines are reduced to a half. The CSBL reduces the swing voltage in the ROM bitlines to very small voltage using a charge sharing technique with three small capacitors. The CSBL can significantly reduce the power dissipation in ROM bitlines. The CRPD, the CRWD, and the CSBL consume 82%, 72%, and 64%, respectively, of the power of previous ROM designs. A charge recycling and charge sharing ROM (CRCS-ROM) with the CRPD, the CRWD, and the CSBL is implemented. A CRCS-ROM with 8K x 16 bits was fabricated in a 0.35-mum CMOS process. The CRCS-ROM consumes 8.63 mW at 100 MHz with 3.3 V. The chip core area is 0.51 mm(2).