Effects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon

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dc.contributor.authorKim, AJko
dc.contributor.authorKallo, MGko
dc.contributor.authorShin, JungHoonko
dc.date.accessioned2013-03-04T20:09:29Z-
dc.date.available2013-03-04T20:09:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-12-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.333 - 336-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/83948-
dc.description.abstractThe effect of erbium-doping on the electrical, optical, and structural properties of hydrogenated amorphous silicon (a-Si:H) is investigated. The electrical conductivity and thermopower measurements show that erbium acts as an n-type dopant in a-Si:H. The photoluminescence measurements show that an optical activity of Er decreases as the Er concentration increases beyond 0.04 at. %. Raman and optical absorption measurements show that erbium induces structural disorder and subsequent increase in the bandtail states of a-Si:H. From the temperature dependence of Er3+ photoluminescence intensities, we identify competitive carrier capture by these band-tail states as all important factor in determining the overall Er3+ photoluminescence intensity. And carbon co-doping enhances the Er3+ PL intensity and reduces the temperature quenching of the Er3+ PL intensity.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectCRYSTAL SILICON-
dc.subjectTHIN-FILMS-
dc.subjectLUMINESCENCE-
dc.subjectEXCITATION-
dc.subjectSI-
dc.subjectDEPENDENCE-
dc.titleEffects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon-
dc.typeArticle-
dc.identifier.wosid000172968700078-
dc.identifier.scopusid2-s2.0-0035542142-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.beginningpage333-
dc.citation.endingpage336-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorKim, AJ-
dc.contributor.nonIdAuthorKallo, MG-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusCRYSTAL SILICON-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusLUMINESCENCE-
dc.subject.keywordPlusEXCITATION-
dc.subject.keywordPlusSI-
dc.subject.keywordPlusDEPENDENCE-
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