Effects of erbium concentration on the band tail states of Er-doped hydrogenated amorphous silicon

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The effect of erbium-doping on the electrical, optical, and structural properties of hydrogenated amorphous silicon (a-Si:H) is investigated. The electrical conductivity and thermopower measurements show that erbium acts as an n-type dopant in a-Si:H. The photoluminescence measurements show that an optical activity of Er decreases as the Er concentration increases beyond 0.04 at. %. Raman and optical absorption measurements show that erbium induces structural disorder and subsequent increase in the bandtail states of a-Si:H. From the temperature dependence of Er3+ photoluminescence intensities, we identify competitive carrier capture by these band-tail states as all important factor in determining the overall Er3+ photoluminescence intensity. And carbon co-doping enhances the Er3+ PL intensity and reduces the temperature quenching of the Er3+ PL intensity.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2001-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

CHEMICAL-VAPOR-DEPOSITION; CRYSTAL SILICON; THIN-FILMS; LUMINESCENCE; EXCITATION; SI; DEPENDENCE

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.333 - 336

ISSN
0374-4884
URI
http://hdl.handle.net/10203/83948
Appears in Collection
NT-Journal Papers(저널논문)
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