Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier

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Gain-determining coefficients in Er-doped, nanocrystal-Si (nc-Si) sensitized silica waveguide amplifiers are investigated. Single-mode, Er-doped silica waveguides with nc-Si embedded in them were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of Er-doped a-Si:O-x (x<2) followed by a high-temperature anneal to precipitate nc-Si. Exciting the Er ions via nc-Si by pumping the waveguide from the top with the 477 nm line of an Ar laser resulted in an enhancement of the transmitted 1535 nm signal of up to 14 dB/cm, indicating a possible net gain of up to 7 dB/cm. From the dependence of the signal enhancement upon the pump power, an emission cross section of 2x10(-19) cm(2) at 1535 nm and an effective excitation cross section of greater than or equal to10(-17) cm(2) at 477 nm is obtained. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-11
Language
English
Article Type
Article
Keywords

SI NANOCRYSTALS; ER3+ LUMINESCENCE; FIBER AMPLIFIERS; ENERGY-TRANSFER; WAVE-GUIDES; EXCITATION; PHOTOLUMINESCENCE; SIO2-FILMS; IONS

Citation

APPLIED PHYSICS LETTERS, v.81, no.20, pp.3720 - 3722

ISSN
0003-6951
DOI
10.1063/1.1520710
URI
http://hdl.handle.net/10203/83942
Appears in Collection
NT-Journal Papers(저널논문)
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