Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

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The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide (SRSO) films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7x10(15) cm(-2) prior to anneal at 1000 degreesC is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-03
Language
English
Article Type
Article
Keywords

AMORPHOUS-SILICON; VISIBLE PHOTOLUMINESCENCE; THERMODYNAMIC PROPERTIES; FILMS; CRYSTALLIZATION; IMPLANTATION; NANOCLUSTERS; TEMPERATURE; SIO2-FILMS; RESONANCE

Citation

JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3236 - 3242

ISSN
0021-8979
URI
http://hdl.handle.net/10203/83926
Appears in Collection
NT-Journal Papers(저널논문)
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