Ferroelectric PLZT thin films prepared by chemical solution deposition

Abstract

Transparent polycrystalline PLZT (x/65/35) thin films were prepared using spin-coating technique of complex alkoxide precursor solutions by both 2ME and IMO sol-gel processes. Effects of lanthanum source and amount as well as annealing temperature on the ferroelectric and electro-optic properties were investigated. Microstructure and crystallization behavior were examined using FE-SEM, AFM and XRD. Ferroelectric hysteresis, optical transmittance and linear electro-optic coefficient values of the films were also measured. The measured remanent polarization and coercive field values were 5-35 muC/cm(2) and 40-70 kV/cm, respectively. Effective differential Pockels coefficient was approximately 2.4x10(-12) m/V.