DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, YH | ko |
dc.contributor.author | Choi, S | ko |
dc.contributor.author | Yoo, Hoi-Jun | ko |
dc.date.accessioned | 2013-03-04T18:31:52Z | - |
dc.date.available | 2013-03-04T18:31:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-01 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.38, no.2, pp.62 - 63 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83641 | - |
dc.description.abstract | To save power consumption in read-modify-write (RMW) DRAM operation, a bit-wise read-compare-write (RCW) scheme is presented. Its power consumption depends on the number of bits that have to be updated by the bit-wise compare result between the read data and the modified data. If a random bit-wise update ratio is assumed, a 11.6% power saving is achieved when the proposed scheme is applied to the previous design. | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.title | Bit-wise read-compare-write scheme for low power read-modify-write DRAM operation | - |
dc.type | Article | - |
dc.identifier.wosid | 000173605000003 | - |
dc.identifier.scopusid | 2-s2.0-0037122906 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 62 | - |
dc.citation.endingpage | 63 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.contributor.localauthor | Yoo, Hoi-Jun | - |
dc.contributor.nonIdAuthor | Park, YH | - |
dc.contributor.nonIdAuthor | Choi, S | - |
dc.type.journalArticle | Article | - |
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