1-Gb/s 80-dB Omega fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects

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A 1-Gb/s differential transimpedance amplifier (TIA) is realized in a 0.25-mum standard CMOS technology, incorporating the regulated cascode input configuration. The TIA chip is then integrated with a p-i-n photodiode on an oxidized phosphorous-silicon (OPS) substrate by employing the multichip-on-oxide (MCO) technology. The NICO TIA demonstrates 80-dBOmega transimpedance gain, 670-MHz bandwidth for 1-pF photodiode capacitance, 0.54-muA average input noise current, -17-dBm sensitivity for 10(-12) bit-error rate (BER), and 27-mW power dissipation from a single 2.5-V supply. It also shows negligible switching noise effect from an embedded VCO on the OPS substrate. Furthermore, a four-channel MCO TIA array is implemented for optical interconnects, resulting in less than -40-dB crosstalk between adjacent channels.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-06
Language
English
Article Type
Article
Keywords

SUBSTRATE; RECEIVER

Citation

IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.39, pp.971 - 974

ISSN
0018-9200
DOI
10.1109/JSSC.2004.827795
URI
http://hdl.handle.net/10203/83630
Appears in Collection
EE-Journal Papers(저널논문)
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