ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

Abstract

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350degreesC. ZnO films deposited below 200 degreesC exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 degreesC showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications. (C) 2004 American Vacuum Society.