InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer

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InP/InGaAs heterojunction bipolar transistors (HBTs) with low-resistance Ti/Pt/Au contact directly on heavily doped InP emitter layer have been demonstrated. A specific contact resistance of Ti/Pt/Au to n-type InP with doping concentration of 2x10(19) cm(-3) was investigated with the tunneling model theoretically and transmission line model (TLM) experimentally, revealing that it depends greatly on the doping level. TLM measurements exhibited a low specific contact resistance of 3.5x10(-7) Omega cm(2), which can be applicable to the fabrication of HBTs. InP/InGaAs HBTs with n(+)-InP emitter layer have been demonstrated with excellent dc characteristics, including a low offset voltage of 0.12 V, a knee voltage of 0.5 V, and a current gain of 28. These results verify that the heavily doped InP emitter layer allows a low-resistance contact. (C) 2004 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2004-04
Language
English
Article Type
Article
Keywords

OHMIC CONTACTS; COLLECTOR; BARRIERS; HBTS

Citation

APPLIED PHYSICS LETTERS, v.84, no.15, pp.2934 - 2936

ISSN
0003-6951
DOI
10.1063/1.1713053
URI
http://hdl.handle.net/10203/82953
Appears in Collection
EE-Journal Papers(저널논문)
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