Negative bias temperature instability on plasma-nitrided silicon dioxide film

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The behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2002-03
Language
English
Article Type
Article
Keywords

INTERFACE; DIFFUSION; TRAPS; OXIDE; SIO2

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316

ISSN
0021-4922
DOI
10.1143/JJAP.41.L314
URI
http://hdl.handle.net/10203/82843
Appears in Collection
EE-Journal Papers(저널논문)
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