DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, SM | ko |
dc.contributor.author | Yoo, Hoi-Jun | ko |
dc.date.accessioned | 2013-03-04T13:48:47Z | - |
dc.date.available | 2013-03-04T13:48:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-01 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.39, pp.211 - 212 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82836 | - |
dc.description.abstract | A 2.5 Gbit/s transimpedance amplifier is realised using a 0.6 mum CMOS technology. By exploiting a regulated cascode configuration as the input stage, the amplifier achieves significant bandwidth improvement. The measured results demonstrate 2.2 GHz bandwidth for 0.5 pF photodiode capacitance with 55.3 dBOmega transimpedance gain. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | 2.5 Gbit/s CMOS transimpedance amplifier for optical communication applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000181532400027 | - |
dc.identifier.scopusid | 2-s2.0-0037461918 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.beginningpage | 211 | - |
dc.citation.endingpage | 212 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el:20030142 | - |
dc.contributor.localauthor | Yoo, Hoi-Jun | - |
dc.contributor.nonIdAuthor | Park, SM | - |
dc.type.journalArticle | Article | - |
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