Thermally stable fully silicided Hf-silicide metal-gate electrode

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We demonstrate, for the first time, thermally stable fully silicided (FUSI) Hf-silicide gate electrode whose workfunction (4.2 eV) is very close to that of n(+) polysilicon. No polysilicon depletion effect and excellent thermal stability with negligible change in equivalent oxide thickness and flatband voltage even after high-temperature annealing at 950 degreesC are demonstrated. These results indicate that FUSI Hf-silicide is a promising candidate for n-MOSFET metal-gate electrode for dual-metal CMOS process.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-06
Language
English
Article Type
Article
Keywords

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Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374

ISSN
0741-3106
DOI
10.1109/LED.2004.829043
URI
http://hdl.handle.net/10203/82786
Appears in Collection
EE-Journal Papers(저널논문)
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