Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

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It is demonstrated that the voltage coefficients of capacitance (VCC) in high-k, metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-k and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fF mum(2) and quadratic VCC of only 14 ppm/V-2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm degreesC) as well as low leakage current of less than 10 nA/cm(2) up to 4 V at 125 degreesC.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-08
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540

ISSN
0741-3106
DOI
10.1109/LED.2004.832785
URI
http://hdl.handle.net/10203/82781
Appears in Collection
EE-Journal Papers(저널논문)
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