Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer

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The over-erase phenomenon in the polysilicon-oxide-silicon nitride-oxide-silicon (SONOS) memory structure is minimized by using hafnium oxide or hafnium aluminum oxide to replace silicon nitride as the charge storage layer (the resulting structures are termed SOHOS devices, where the "H" denotes the high dielectric constant material instead of silicon nitride). Unlike SONOS devices, SOHOS structures show a reduced over-erase phenomenon and self-limiting charge storage behavior under both erase and program operations. These are attributed to the differences in band offset and the crystallinity of the charge storage layer.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-07
Language
English
Article Type
Article
Keywords

DIELECTRICS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147

ISSN
0018-9383
DOI
10.1109/TED.2004.829861
URI
http://hdl.handle.net/10203/82567
Appears in Collection
EE-Journal Papers(저널논문)
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