DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mathew, S | ko |
dc.contributor.author | Bera, LK | ko |
dc.contributor.author | Balasubramanian, N | ko |
dc.contributor.author | Joo, MS | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-04T09:08:11Z | - |
dc.date.available | 2013-03-04T09:08:11Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.citation | THIN SOLID FILMS, v.462, pp.11 - 14 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82277 | - |
dc.description.abstract | NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO2 devices. All high-k devices showed lower mobility compared with SiO2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. (C) 2004 Published by Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | SI | - |
dc.title | Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000223812800004 | - |
dc.identifier.scopusid | 2-s2.0-4344701124 | - |
dc.type.rims | ART | - |
dc.citation.volume | 462 | - |
dc.citation.beginningpage | 11 | - |
dc.citation.endingpage | 14 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/j.tsf.2004.05.017 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Mathew, S | - |
dc.contributor.nonIdAuthor | Bera, LK | - |
dc.contributor.nonIdAuthor | Balasubramanian, N | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | HfAlO | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordPlus | SI | - |
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