Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

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NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO2 devices. All high-k devices showed lower mobility compared with SiO2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. (C) 2004 Published by Elsevier B.V.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2004-09
Language
English
Article Type
Article; Proceedings Paper
Keywords

SI

Citation

THIN SOLID FILMS, v.462, pp.11 - 14

ISSN
0040-6090
DOI
10.1016/j.tsf.2004.05.017
URI
http://hdl.handle.net/10203/82277
Appears in Collection
EE-Journal Papers(저널논문)
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