Correlation between interface traps and gate oxide leakage current in the direct tunneling regime

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Our experiment shows that when the gate oxide thickness is scaled to direct tunneling regime, the gate leakage current, and the number of interface traps increase in a discrete manner rather than in a gradual increment. A direct correlation between the increments of the gate leakage current and interface traps, irrespective of stressing polarity, is also observed. The discrete increase in gate current is due to degradation at localized spots rather than a uniform degradation over the entire gate area. The increment is also observed over a wide voltage range unlike interface-trap-assisted tunneling previously reported which occurs mainly near the flat-band voltage. A possible mechanism is proposed based on the observations. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-07
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.81, no.2, pp.379 - 381

ISSN
0003-6951
DOI
10.1063/1.1492011
URI
http://hdl.handle.net/10203/82131
Appears in Collection
EE-Journal Papers(저널논문)
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