Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

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The effect of high nitrogen concentration incorporation using decoupled plasma nitridation (DPN) of ultra-thin gate oxide (approximate to 15-17 Angstrom) on p-channel MOSFET performance has been investigated and compared with the conventional thermal nitridation process. Boron penetration is successfully suppressed in the ultra-thin gate dielectric prepared by the DPN process. This is confirmed by the measurements of gate leakage current, flat-band voltage shift and interface trap densities. The success in blocking boron penetration by DPN is attributed to its capability in incorporating a high level of nitrogen to near the top interface of the gate oxide. However, as a result of high level nitridation by DPN, a degradation in transconductance (Gm) is observed and interface trap density is also increased, compared to the conventional thermal nitridation process.
Publisher
IOP PUBLISHING LTD
Issue Date
2002-06
Language
English
Article Type
Article
Keywords

BORON PENETRATION; ELECTRICAL-PROPERTIES; SILICON GATE; RELIABILITY; NITROGEN; INTERFACE; DIFFUSION

Citation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28

ISSN
0268-1242
DOI
10.1088/0268-1242/17/6/101
URI
http://hdl.handle.net/10203/82122
Appears in Collection
EE-Journal Papers(저널논문)
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