Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

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Raman spectroscopy was used to investigate excimer laser annealing and thickness determination of amorphous silicon (a-Si) layers which are less than 20 nm thick. The a-Si layers were produced on silicon (Si) substrates using Si+ ion implantation with an energy of 10 keV and a dose of 1 x 10(15) cm(-2). Excimer laser annealing was applied to re-crystallize the a-Si layers. The dependence of re-crystallization on laser fluence was investigated using Raman spectroscopy. A threshold laser fluence of 0.4 J cm(-2) was required to re-crystallize the a-Si layers. In Raman spectroscopy, the Raman intensity shows a periodical variation with a period of 90degrees as a function of the angle between the Si orientation and the laser polarization. Based on this phenomenon, a method to determine nanoscale a-Si film thickness was proposed in two ways. One way was carried out without sample rotation to determine the a-Si thickness provided that the reference c-Si and a-Si/c-Si samples are in the same crystal orientation. The other way was carried out with sample rotation to determine the a-Si thickness without knowing the crystal orientation beforehand.
Publisher
IOP PUBLISHING LTD
Issue Date
2004-05
Language
English
Article Type
Article
Keywords

POLY-SI TFTS; POLYCRYSTALLINE SILICON; ELECTRICAL-PROPERTIES; FILMS; CRYSTALLIZATION; FABRICATION; GE

Citation

NANOTECHNOLOGY, v.15, no.5, pp.658 - 662

ISSN
0957-4484
DOI
10.1088/0957-4484/15/5/043
URI
http://hdl.handle.net/10203/82112
Appears in Collection
EE-Journal Papers(저널논문)
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