Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

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The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5 similar to 22.5 mum were fabricated on the standard silicon substrate of 1 similar to 30 Omega (.) cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 mum.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-02
Language
English
Article Type
Article
Keywords

SILICON; DESIGN

Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.2, pp.76 - 79

ISSN
0741-3106
DOI
10.1109/LED.2003.822652
URI
http://hdl.handle.net/10203/82067
Appears in Collection
EE-Journal Papers(저널논문)
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