Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Cited 9 time in webofscience Cited 0 time in scopus
  • Hit : 209
  • Download : 0
The quasi-breakdown (QB) mechanism or thin gate oxide was investigated through observation of defects generation during stress. It has been found that the amount of interface traps reaches to the same critical value at the onset point of QB regardless of stress conditions, implying that QB in thin oxide is triggered by a critical amount or interface traps.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2001-05
Language
English
Article Type
Article
Keywords

SOFT BREAKDOWN; SILICON; STRESS; LAYERS; TRAPS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013

ISSN
0018-9383
URI
http://hdl.handle.net/10203/81892
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 9 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0