Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

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A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/mum(2) with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-07
Language
English
Article Type
Article
Keywords

DIELECTRICS

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444

ISSN
0741-3106
DOI
10.1109/LED.2003.814024
URI
http://hdl.handle.net/10203/81864
Appears in Collection
EE-Journal Papers(저널논문)
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