Formation process and lattice parameter of InAs/GaAs quantum dots
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, MD | ko |
| dc.contributor.author | Lee, HS | ko |
| dc.contributor.author | Lee, JeongYong | ko |
| dc.contributor.author | Kim, TW | ko |
| dc.contributor.author | Yoo, KH | ko |
| dc.contributor.author | Kim, GH | ko |
| dc.date.accessioned | 2013-03-04T03:54:29Z | - |
| dc.date.available | 2013-03-04T03:54:29Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-12 | - |
| dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, pp.1767 - 1770 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/81815 | - |
| dc.language | English | - |
| dc.publisher | SPRINGER | - |
| dc.subject | HETEROSTRUCTURES | - |
| dc.subject | SURFACE | - |
| dc.subject | LASERS | - |
| dc.subject | GROWTH | - |
| dc.subject | SHAPE | - |
| dc.title | Formation process and lattice parameter of InAs/GaAs quantum dots | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000186783400009 | - |
| dc.identifier.scopusid | 2-s2.0-0347763674 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 22 | - |
| dc.citation.beginningpage | 1767 | - |
| dc.citation.endingpage | 1770 | - |
| dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE LETTERS | - |
| dc.contributor.localauthor | Lee, JeongYong | - |
| dc.contributor.nonIdAuthor | Kim, MD | - |
| dc.contributor.nonIdAuthor | Lee, HS | - |
| dc.contributor.nonIdAuthor | Kim, TW | - |
| dc.contributor.nonIdAuthor | Yoo, KH | - |
| dc.contributor.nonIdAuthor | Kim, GH | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | HETEROSTRUCTURES | - |
| dc.subject.keywordPlus | SURFACE | - |
| dc.subject.keywordPlus | LASERS | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | SHAPE | - |
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