Er-doped hydrogenated amorphous silicon: structural and optical properties

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The effect of erbium-doping on the structural and optical properties of hydrogenated amorphous silicon (a-Si:H) is investigated. Optical absorption and Raman spectra indicate that erbium doping introduces defect states, and that above a concentration of 0.27 at.%, induces strong structural disorder. The photoluminescence measurements show that erbium doping introduces non-radiative decay paths for carriers in a-Si:H, leading to decrease in both the Er3+ and intrinsic a-Si:H luminescence intensity when the Er concentration is increased to more than 0.04 at.%. The results are compared to that of Er-doped crystalline Si, and the possible excitation mechanisms of Er in a-Si:H are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2003-01
Language
English
Article Type
Article
Keywords

A-SI-H; ROOM-TEMPERATURE ELECTROLUMINESCENCE; MOLECULAR-BEAM EPITAXY; 1.54 MU-M; CRYSTALLINE SILICON; ERBIUM LUMINESCENCE; ENERGY-TRANSFER; EXCITATION; OXYGEN; DIODES

Citation

JOURNAL OF NON-CRYSTALLINE SOLIDS, v.315, no.3, pp.312 - 320

ISSN
0022-3093
URI
http://hdl.handle.net/10203/81459
Appears in Collection
NT-Journal Papers(저널논문)
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