The influence of gate poly-silicon oxidation on negative bias temperature instability in 3D FinFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, H. | ko |
| dc.contributor.author | Lee, C.-H. | ko |
| dc.contributor.author | Park, D. | ko |
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.date.accessioned | 2007-07-03T09:01:09Z | - |
| dc.date.available | 2007-07-03T09:01:09Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007-04-15 | - |
| dc.identifier.citation | 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS, pp.680 - 681 | - |
| dc.identifier.issn | 0099-9512 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/808 | - |
| dc.description.sponsorship | Samsung Electronics Co., Ltd., Korea Ministry of Science and Technology. | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | The influence of gate poly-silicon oxidation on negative bias temperature instability in 3D FinFET | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000246989600151 | - |
| dc.identifier.scopusid | 2-s2.0-34548723916 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 680 | - |
| dc.citation.endingpage | 681 | - |
| dc.citation.publicationname | 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Phoenix, AZ | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Lee, H. | - |
| dc.contributor.nonIdAuthor | Lee, C.-H. | - |
| dc.contributor.nonIdAuthor | Park, D. | - |
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