The influence of gate poly-silicon oxidation on negative bias temperature instability in 3D FinFET

Publisher
IEEE
Issue Date
2007-04-15
Language
ENG
Citation

45th Annual IEEE International Reliability Physics Symposium 2007, IRPS, pp.680 - 681

ISSN
0099-9512
URI
http://hdl.handle.net/10203/808
Appears in Collection
EE-Conference Papers(학술회의논문)
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