MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

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The metal-insulator-metal (MIM) capacitors with (HfO2)(1-x)(Al2O3)(x) high-kappa dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature, coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)(1-x)(Al2O3)(x) MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fF/muM(2)) and low VCC values (similar to 140 ppm/V-2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)(1-x)(Al2O3)(x) MIM capacitors after N-2 annealing at 400 degreesC. All these show that the (HfO2)(0.86)(Al2O3)(0.14) MIM capacitor is very suitable for the capacitor applications within the. thermal budget of the back end of line process.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-02
Language
English
Article Type
Article
Keywords

TA2O5 FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62

ISSN
0741-3106
DOI
10.1109/LED.2002.807703
URI
http://hdl.handle.net/10203/80305
Appears in Collection
EE-Journal Papers(저널논문)
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