Crystallographically defined emitter contact technology for self-alignment process in InP/InGaAs HBTs

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An approach for fabricating a self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) with InGaAs dummy emitter layer was demonstrated. The self-aligned emitter-base structure employs crystallographically defined emitter contact (CDC) technology to define a desired emitter-to-base contact spacing. An anisotropic wet etching of the InGaAs dummy emitter layer grown on the HBT layer structure leads to the crystallographically etched profiles to configure the shape of the emitter contact. InP/InGaAs HBTs demonstrated good current-voltage characteristics with a current gain more than 40 and a knee voltage of approximately 0.5 V up to a collector current density of 1 x 10(5) A/cm(2), indicating the effectiveness of the new self-alignment technology. (C) 2004 The Electrochemical Society.
Publisher
Electrochemical Soc Inc
Issue Date
2004
Language
English
Article Type
Article
Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; CHEMICAL ETCHING CHARACTERISTICS

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.J29 - J31

ISSN
1099-0062
DOI
10.1149/1.1764414
URI
http://hdl.handle.net/10203/80114
Appears in Collection
EE-Journal Papers(저널논문)
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