MOS characteristics of substituted Al gate on high-kappa dielectric

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Substituted aluminum (SA) metal gate on high-kappa gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 degreesC. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-11
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727

ISSN
0741-3106
DOI
10.1109/led.2004.837537
URI
http://hdl.handle.net/10203/80014
Appears in Collection
EE-Journal Papers(저널논문)
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