Preparation and electrical properties of sol-gel derived (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3) (x=0.6) thin films

Cited 10 time in webofscience Cited 0 time in scopus
  • Hit : 137
  • Download : 0
The films of (1-x)Pb(Sc1/2Nb1/2)O-3-xPbTiO(3) (x=0.6, PSNT(40/60)) were successfully deposited on Pt/Ti/SiO2/Si substrates via spin coating method. Using combination of homogeneous precursor solutions and two-step heat treatment, it was possible to obtain the PSNT(40/60) thin films of perfect perovskite phase with virtually no pyrochlore phase after annealing just above 550 degreesC. The root-mean-square surface roughness of a 240-nm-thick film was 3 nm as measured by atomic force microscope (AFM). The PSNT(40/60) films annealed at 650 degreesC showed a well-saturated hysteresis loop at an applied voltage of 7 V with remnant polarization (P-r) and coercieve voltage (V-c) of 14 muC/cm(2) and 1.5 V. The leakage current density was lower than 10(-6) A/cm(2) at an applied voltage of 7 V. (C) 2001 Elsevier Science Ltd.
Publisher
ELSEVIER SCI LTD
Issue Date
2001
Language
English
Article Type
Article; Proceedings Paper
Keywords

FERROELECTRIC PROPERTIES; BEHAVIOR

Citation

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.21, no.10-11, pp.1509 - 1512

ISSN
0955-2219
DOI
10.1016/S0955-2219(01)00052-8
URI
http://hdl.handle.net/10203/79956
Appears in Collection
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 10 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0