An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

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We propose and demonstrate a novel approach for dual metal gate CMOS process integration through the use of a very thin aluminum nitride (AlNx) buffer layer between metal and gate oxide. This buffer layer prevents the gate oxide from being exposed to a metal etching process which potentially causes oxide thinning and damage. Subsequent annealing consumes the very thin AlNx layer and converts it into a new metal alloy film by reacting with gate metals, resulting in no increase in EOT due to this buffer layer. The work function of the original gate metal is also modified as a result of its reaction with AlNx, making this approach extremely attractive for engineering the work function for dual metal gate CMOS applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-05
Language
English
Article Type
Article
Keywords

DEVICES

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300

ISSN
0741-3106
DOI
10.1109/LED.2003.812548
URI
http://hdl.handle.net/10203/79736
Appears in Collection
EE-Journal Papers(저널논문)
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