Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Cited 13 time in webofscience Cited 0 time in scopus
  • Hit : 314
  • Download : 0
Charge trapping and breakdown.:mechanism in p- and n-channel MOSFETs with an HfA1(x)O(y) and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAlx O-y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2004-12
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703

ISSN
1530-4388
DOI
10.1109/TDMR.2004.838416
URI
http://hdl.handle.net/10203/78936
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 13 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0