DSpace at KOASAS: The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers

DSpace at KOASAS

College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers

Cited 0 time in webofscience

Cited 0 time in scopus

Hit : 309
Download : 0

Export

H.S. Kim / J.J. Lee / S.Y. jeong / Lee, JeongYong researcher / J.Y. Lin / H.X. Jiang

Publisher: Materials Research Society of Korea

Issue Date: 2002

Language: Korean

Citation: KOREAN JOURNAL OF MATERIALS RESEARCH, v.12, no.3, pp.190 - 194

ISSN: 1225-0562

URI: http://hdl.handle.net/10203/78871

Appears in Collection: MS-Journal Papers(저널논문)

Files in This Item: There are no files associated with this item.

Display Full Item Record

qr_code

트윗하기

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

KOASAS

KOASAS

Browse

The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers

KOASAS

Communities & Collections