A high performance MIM capacitor using HfO(2) dielectrics

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Metal-insulator-metal (MIM) capacitors with a 56-nm-thick HfO(2) high-kappa dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (similar to200 degreesC). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO(2) MIM capacitor can provide a higher capacitance density than Si(3)N(4) MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 x 10(-9) A/cm(2) at 3 V is achieved. All of these make the HfO(2) MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-09
Language
English
Article Type
Article
Keywords

INSULATOR-METAL CAPACITORS; FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516

ISSN
0741-3106
DOI
10.1109/LED.2002.802602
URI
http://hdl.handle.net/10203/78737
Appears in Collection
EE-Journal Papers(저널논문)
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