Metal-insulator-metal (MIM) capacitors with a 56-nm-thick HfO(2) high-kappa dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (similar to200 degreesC). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO(2) MIM capacitor can provide a higher capacitance density than Si(3)N(4) MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 x 10(-9) A/cm(2) at 3 V is achieved. All of these make the HfO(2) MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.