A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

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Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness Of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/mum(2) and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 x 10-(8)A/cm(2) at room temperature at I V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-02
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65

ISSN
0741-3106
DOI
10.1109/LED.2002.808159
URI
http://hdl.handle.net/10203/78728
Appears in Collection
EE-Journal Papers(저널논문)
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