1/f noise characteristics of hydrogenated long-wavelength infrared HgCdTe photodiode

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1/f noise characteristics of hydrogenated HgCdTe photodiode have been investigated. The hydrogenated diodes have better 1/f noise characteristics than typical ion implanted or plasma-induced junction diodes. In order to investigate the origin of the noise reduction, infrared transmission of the HgCdTe was measured. The absorption edge shift and infrared transmission enhancement were observed in hydrogenated samples, which means that the hydrogenation can passivate point defects or residual impurities in HgCdTe. The carrier mobility increment and concentration reduction were also observed in hydrogenated HgCdTe.
Publisher
JAPAN SOCIETY OF APPLIED PHYSICS
Issue Date
2004-12
Language
English
Article Type
Article
Keywords

PASSIVATION; TECHNOLOGY; HG1-XCDXTE; DETECTORS; CURRENTS; DEFECTS; DIODES

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, pp.L1617 - L1619

DOI
10.1143/JJAP.43.L1617
URI
http://hdl.handle.net/10203/78336
Appears in Collection
EE-Journal Papers(저널논문)
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