DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, DH | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2013-03-03T05:39:12Z | - |
dc.date.available | 2013-03-03T05:39:12Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, no.3A, pp.253 - 255 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77468 | - |
dc.description.abstract | Selective lateral etching for an Al0.3Ga0.7As/GaAs system was conducted with iodine-potassium iodide (I-2/KI) redox solution having high preferential etching characteristics. The selectivity of Al0.3Ga0.7As relative to GaAs varied with the molar ratio of I-2/KI, pH, stripe direction, and stirring speed of the solution. The undercut widths of Al(0.3)Ga(0.7)AS below the GaAs layer were measured by observing the etched cross-section with a scanning electron microscope. For the [100] directional stripe, the undercut width of Al0.3Ga0.7As was measured up to about 3 mu m after etching for 1 min under the etching conditions of [I-2]/[KI] = 0.67 and pH = 2.76. As a new application to the AlxGa1-xAs/GaAs heterojunction bipolar transistor (HBT) with x less than or equal to 0.3, selective lateral etching was carried out to reduce the extrinsic base-collector capacitance of the HBT. As the result of capacitance-voltage (C-V) measurement, the base-collector capacitance of the lateral etched HBT was reduced to about 50% of that of the conventional HBT. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | HYDROGEN-PEROXIDE SOLUTIONS | - |
dc.subject | BASE-COLLECTOR CAPACITANCE | - |
dc.subject | BIPOLAR-TRANSISTORS | - |
dc.subject | GAAS | - |
dc.subject | INP | - |
dc.title | Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure using the redox solution of I-2/KI | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WU03400002 | - |
dc.identifier.scopusid | 2-s2.0-0031098298 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 3A | - |
dc.citation.beginningpage | 253 | - |
dc.citation.endingpage | 255 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Kim, DH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | selective lateral etching | - |
dc.subject.keywordAuthor | redox solution | - |
dc.subject.keywordAuthor | iodine and potassium iodide | - |
dc.subject.keywordAuthor | Al0.3Ga0.7As/GaAs | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor | - |
dc.subject.keywordPlus | HYDROGEN-PEROXIDE SOLUTIONS | - |
dc.subject.keywordPlus | BASE-COLLECTOR CAPACITANCE | - |
dc.subject.keywordPlus | BIPOLAR-TRANSISTORS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | INP | - |
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