Hydrogenation time dependence of a-SiC:H-based P-I-N thin film visible light-emitting diode characteristics

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The hydrogenation time dependence of hydrogenation effects on the performance of a-SiC:H-based p-i-n thin film light-emitting diodes (TFLEDs) in the visible range has been investigated. It was found that hydrogenation markedly improved the device performance, and that increasing the hydrogenation time beyond a saturation point degraded the device performance; that is, as compared with the performance of a TFLED hydrogenated for a short time (similar to 15 min), the threshold voltage increased slightly, the EL peak shifted towards a longer wavelength, and the brightness decreased. In particular; after hydrogenation for 45 min, the brightness decreased to 15 cd/m(2).
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1996-09
Language
English
Article Type
Article
Keywords

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Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.9A, pp.1111 - 1113

ISSN
0021-4922
URI
http://hdl.handle.net/10203/77344
Appears in Collection
EE-Journal Papers(저널논문)
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