Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate

Abstract

We report on the observation of room-temperature single electron tunneling phenomena in a metal-insulator-metal-semiconductor double-junction structure. The nanosized Ag dots were self-assembled on a Sb-terminated Si(100) surface, and the Coulomb gap and staircases were observed in the local current-voltage (I-V) measurements using scanning tunneling microscopy. The I-V characteristics exhibiting the single electron tunneling behavior vary significantly with the variation of the measurement position within the same Ag droplet. These phenomena are well described by the tip-dot(Ag)-Si double-junction picture. (C) 1997 American Institute of Physics.