Natural hydrogen treatment effect during formation of double amorphous silicon-carbide p layer structures producing high-efficiency pin-type amorphous silicon solar cells

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We proposed a double p-type amorphous silicon-carbide (p-a-SiC : H) layer structure to improve the p/i interface of pin-type amorphous silicon based solar cells. We found a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. It is beneficial to increase overall solar cell parameters by successfully reducing recombination at the p/i interface. (C) 2005 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2005-01
Language
English
Article Type
Article
Keywords

PHOTOCHEMICAL VAPOR-DEPOSITION; SIC-H FILMS; ULTRAVIOLET TREATMENT; OPTICAL FUNCTIONS; INTERFACE; AMBIENT

Citation

APPLIED PHYSICS LETTERS, v.86, pp.915 - 916

ISSN
0003-6951
DOI
10.1063/1.1853492
URI
http://hdl.handle.net/10203/768
Appears in Collection
EE-Journal Papers(저널논문)
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