Highly stable and textured hydrogenated ZnO thin films

We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (11 (2) over bar0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-05
Language
ENG
Keywords

CHEMICAL-VAPOR-DEPOSITION; SHALLOW DONOR; SOLAR-CELLS; ZINC-OXIDE; INTERFACE; SILICON

Citation

APPLIED PHYSICS LETTERS, v.82, pp.3026 - 3028

ISSN
0003-6951
URI
http://hdl.handle.net/10203/766
Appears in Collection
EE-Journal Papers(저널논문)
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