Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime

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We investigated the structural, electrical, and optical properties as well as light-induced degradation characteristics of silicon films prepared by photochemical vapor deposition at various hydrogen dilution ratios. The protocrystalline silicon deposited before the onset of the microcrystalline regime was most stable against light soaking. However, the films deposited at the onset of the microcrystalline regime, known to have the most competent device quality and stability, were observed to be less stable. Such instability at the onset of the microcrystalline regime is correlated with the existence of the clustered phase hydrogen that indicates microvoids in the films. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-03
Language
English
Article Type
Article
Keywords

HYDROGENATED AMORPHOUS-SILICON; SPECTROSCOPIC ELLIPSOMETRY; VAPOR-DEPOSITION; SOLAR-CELLS; MICROVOIDS; DISCHARGE; DEFECT; SI

Citation

APPLIED PHYSICS LETTERS, v.82, pp.1718 - 1720

ISSN
0003-6951
URI
http://hdl.handle.net/10203/765
Appears in Collection
EE-Journal Papers(저널논문)
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