High speed monolithically integrated p-i-n/HBT photoreceivers

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dc.contributor.authorSyao, KCko
dc.contributor.authorGutierrezAitken, ALko
dc.contributor.authorYang, Kyounghoonko
dc.contributor.authorZhang, XKko
dc.contributor.authorHaddad, GIko
dc.contributor.authorBhattacharya, PKko
dc.date.accessioned2013-03-03T00:59:06Z-
dc.date.available2013-03-03T00:59:06Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-05-
dc.identifier.citationIEICE TRANSACTIONS ON ELECTRONICS, v.E80C, no.5, pp.695 - 702-
dc.identifier.issn0916-8524-
dc.identifier.urihttp://hdl.handle.net/10203/76368-
dc.description.abstractThe characteristics of high-performance InP-based monolithically integrated single and multiple channel photoreceivers with an InGaAs p-i-n photodiode and InAlAs/InGaAs HBTs, realized by one-step molecular beam epitaxy, are described. The monolithically integrated photoreceiver includes an integrated spiral inductor following the p-i-n diode at the input of the transimpedance amplifier to enhance the circuit response at high frequencies. Crosstalk of the multi-channel photoreceiver arrays is greatly reduced by applying both a metal ground shield and dual bias. The maximum measured -3 dB bandwidth of a single-channel integrated p-i-n/HBT photoreceiver is 19.5 GHz and the minimum crosstalk of the photoreceiver arrays, with an individual channel bandwidth of 11.5 GHz, is -36 dB. At these performance levels, these OEICs represent the state-of-the-art in multichannel integrated photoreceiver arrays.-
dc.languageEnglish-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG-
dc.subjectTRANSMISSION-SYSTEMS-
dc.subjectRECEIVER ARRAY-
dc.subjectLASER-DIODES-
dc.subjectDESIGN-
dc.titleHigh speed monolithically integrated p-i-n/HBT photoreceivers-
dc.typeArticle-
dc.identifier.wosidA1997XB29100013-
dc.identifier.scopusid2-s2.0-0031147285-
dc.type.rimsART-
dc.citation.volumeE80C-
dc.citation.issue5-
dc.citation.beginningpage695-
dc.citation.endingpage702-
dc.citation.publicationnameIEICE TRANSACTIONS ON ELECTRONICS-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorSyao, KC-
dc.contributor.nonIdAuthorGutierrezAitken, AL-
dc.contributor.nonIdAuthorZhang, XK-
dc.contributor.nonIdAuthorHaddad, GI-
dc.contributor.nonIdAuthorBhattacharya, PK-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorphotoreceiver-
dc.subject.keywordAuthorarray-
dc.subject.keywordAuthorcrosstalk-
dc.subject.keywordAuthorsensitivity-
dc.subject.keywordAuthorHBT-
dc.subject.keywordPlusTRANSMISSION-SYSTEMS-
dc.subject.keywordPlusRECEIVER ARRAY-
dc.subject.keywordPlusLASER-DIODES-
dc.subject.keywordPlusDESIGN-
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