High speed monolithically integrated p-i-n/HBT photoreceivers

Abstract

The characteristics of high-performance InP-based monolithically integrated single and multiple channel photoreceivers with an InGaAs p-i-n photodiode and InAlAs/InGaAs HBTs, realized by one-step molecular beam epitaxy, are described. The monolithically integrated photoreceiver includes an integrated spiral inductor following the p-i-n diode at the input of the transimpedance amplifier to enhance the circuit response at high frequencies. Crosstalk of the multi-channel photoreceiver arrays is greatly reduced by applying both a metal ground shield and dual bias. The maximum measured -3 dB bandwidth of a single-channel integrated p-i-n/HBT photoreceiver is 19.5 GHz and the minimum crosstalk of the photoreceiver arrays, with an individual channel bandwidth of 11.5 GHz, is -36 dB. At these performance levels, these OEICs represent the state-of-the-art in multichannel integrated photoreceiver arrays.