DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, HyoHoon | ko |
dc.contributor.author | Yoo, BS | ko |
dc.contributor.author | Chu, HY | ko |
dc.contributor.author | Lee, EH | ko |
dc.contributor.author | Park, MS | ko |
dc.contributor.author | Ahn, BT | ko |
dc.date.accessioned | 2013-03-03T00:14:50Z | - |
dc.date.available | 2013-03-03T00:14:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-02 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.1378 - 1381 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76197 | - |
dc.description.abstract | We propose a vertical-cavity surface-emitting laser buried in low-temperature-grown amorphous GaAs (a-GaAs), which was found to be effective for surface passivation of an etched cavity and suppression of high-order transverse modes. The deposition of highly resistive a-GaAs layer on an InGaAs/GaAs active region and AlAs/GaAs mirror layers yielded a significant improvement in threshold current density and differential quantum efficiency. The maximum currents maintaining a stable fundamental transverse mode were also increased by the antiguide effect of a-GaAs with a high refractive index. For a 10-mu m-diameter device, we attained a stable single-mode emission with a threshold current of 0.7 mA. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | DEPOSITION | - |
dc.title | Low-threshold-current and single-mode surface-emitting laser buried in amorphous GaAs | - |
dc.type | Article | - |
dc.identifier.wosid | A1996UD94100122 | - |
dc.identifier.scopusid | 2-s2.0-0030080297 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 2B | - |
dc.citation.beginningpage | 1378 | - |
dc.citation.endingpage | 1381 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Park, HyoHoon | - |
dc.contributor.nonIdAuthor | Yoo, BS | - |
dc.contributor.nonIdAuthor | Chu, HY | - |
dc.contributor.nonIdAuthor | Lee, EH | - |
dc.contributor.nonIdAuthor | Park, MS | - |
dc.contributor.nonIdAuthor | Ahn, BT | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | surface-emitting lasers | - |
dc.subject.keywordAuthor | amorphous GaAs | - |
dc.subject.keywordAuthor | surface passivation | - |
dc.subject.keywordAuthor | transverse mode | - |
dc.subject.keywordPlus | DEPOSITION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.