Low-threshold-current and single-mode surface-emitting laser buried in amorphous GaAs

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We propose a vertical-cavity surface-emitting laser buried in low-temperature-grown amorphous GaAs (a-GaAs), which was found to be effective for surface passivation of an etched cavity and suppression of high-order transverse modes. The deposition of highly resistive a-GaAs layer on an InGaAs/GaAs active region and AlAs/GaAs mirror layers yielded a significant improvement in threshold current density and differential quantum efficiency. The maximum currents maintaining a stable fundamental transverse mode were also increased by the antiguide effect of a-GaAs with a high refractive index. For a 10-mu m-diameter device, we attained a stable single-mode emission with a threshold current of 0.7 mA.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1996-02
Language
English
Article Type
Article; Proceedings Paper
Keywords

DEPOSITION

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.1378 - 1381

ISSN
0021-4922
URI
http://hdl.handle.net/10203/76197
Appears in Collection
EE-Journal Papers(저널논문)
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