DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Koeng-Su | ko |
dc.date.accessioned | 2007-07-02T06:42:18Z | - |
dc.date.available | 2007-07-02T06:42:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.72, no.1, pp.106 - 108 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/759 | - |
dc.description.abstract | A boron-doped hydrogenated amorphous diamondlike carbon (a-DLC:H) was prepared using a mercury-sensitized photochemical vapor deposition (photo-CVD) method. The source gases were B2H6 and C2H4. By increasing the boron doping ratio (B2H6/C2H4) from 0 to 12 000 ppm, the dark conductivity increased from similar to 10(-9) to similar to 10(-7) S/cm. A boron-doped a-DLC:H with an energy band gap of 3.8 eV and a dark conductivity of 1.3x10(-8) S/cm was obtained at a doping ratio of 3600 ppm. By using this film, amorphous silicon (a-Si) solar cells with a novel p-n-DLC:H/p-a-SiC double p-layer structure were fabricated using the photo-CVD method and the cell photovoltaic characteristics were investigated as a function of a-DLC:H layer thickness. The open circuit voltage increased from 0.766 V for the conventional cell with a 40-Angstrom-thick p-a-SiC to 0.865 V for the cell with a p-a-DLC:H (15 Angstrom)/p-a-SiC (40 Angstrom) double p-layer structure. The thin (<15 Angstrom) p-a-DLC:H layer proved to be an excellent hole emitter as a wide band gap window layer. (C) 1998 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject | FILMS | - |
dc.subject | SI | - |
dc.title | Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon pin solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000071324400037 | - |
dc.identifier.scopusid | 2-s2.0-0012693920 | - |
dc.type.rims | ART | - |
dc.citation.volume | 72 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 106 | - |
dc.citation.endingpage | 108 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SI | - |
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