Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

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The 1.54 mu m Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins. (C) 2000 American Institute of Physics. [S0003-6951(00)03313-1].
Publisher
AMER INST PHYSICS
Issue Date
2000-04
Language
English
Article Type
Article
Keywords

MU-M LUMINESCENCE; POROUS SILICON; TEMPERATURE-DEPENDENCE; ENERGY-TRANSFER; ER3+; SI

Citation

APPLIED PHYSICS LETTERS, v.76, no.15, pp.1999 - 2001

ISSN
0003-6951
DOI
10.1063/1.126234
URI
http://hdl.handle.net/10203/75996
Appears in Collection
NT-Journal Papers(저널논문)
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