Optimization of a horizontal MOCVD reactor for uniform epitaxial layer growth

Cited 10 time in webofscience Cited 0 time in scopus
  • Hit : 219
  • Download : 0
The numerical optimization-scheme developed previously is successfully applied to optimize the geometric shape of a horizontal metal-organic chemical vapor deposition reactor for a uniform epitaxial layer of compound material. The procedure is based on sequential linear programming in which the reactor shape is approximated by the Chebyshev polynomials. A SIMPLE-type finite volume method is used on a general nonorthogonal grid to obtain the flow characteristics by solving the fully elliptic momentum, energy, and concentration equations. It has been demonstrated that more than a 30-fold improvement in uniformity can be achieved by this optimization for various flow and geometric conditions considered in this study. The optimization is also found effective for mixed convection flows as the buoyancy driven recirculation may be suppressed completely. (C) 2000 Elsevier Science Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2000-05
Language
English
Article Type
Article
Keywords

VAPOR-PHASE EPITAXY; MASS-TRANSFER; HEAT; DESIGN

Citation

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, v.43, no.10, pp.1851 - 1858

ISSN
0017-9310
URI
http://hdl.handle.net/10203/75909
Appears in Collection
ME-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 10 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0